BC549C,112 datasheet

Маркировка

BC549C,112
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BC549C,112 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 30V Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 30 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz (Min) DC Collector/Base Gain hfe Min: 420 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Maximum Power Dissipation: 500 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Other Names: 933197700112, BC549CP
Количество страниц

7 шт.
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57,31 KB